{"title":"高速波导集成Ge/Si雪崩光电探测器","authors":"N. Duan, T. Liow, A. Lim, L. Ding, G. Lo","doi":"10.1364/OFC.2013.OM3K.3","DOIUrl":null,"url":null,"abstract":"We report waveguide Ge/Si avalanche photodiodes with a high 3-dB bandwidth of ~20 GHz and a high responsivity of 22 A/W. Such device can be monolithically integrated with other silicon photonic components on SOI substrates.","PeriodicalId":6456,"journal":{"name":"2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"High speed waveguide-integrated Ge/Si avalanche photodetector\",\"authors\":\"N. Duan, T. Liow, A. Lim, L. Ding, G. Lo\",\"doi\":\"10.1364/OFC.2013.OM3K.3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report waveguide Ge/Si avalanche photodiodes with a high 3-dB bandwidth of ~20 GHz and a high responsivity of 22 A/W. Such device can be monolithically integrated with other silicon photonic components on SOI substrates.\",\"PeriodicalId\":6456,\"journal\":{\"name\":\"2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/OFC.2013.OM3K.3\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/OFC.2013.OM3K.3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
摘要
我们报道了具有~20 GHz高3db带宽和22 a /W高响应率的波导Ge/Si雪崩光电二极管。该器件可与SOI衬底上的其他硅光子元件单片集成。
High speed waveguide-integrated Ge/Si avalanche photodetector
We report waveguide Ge/Si avalanche photodiodes with a high 3-dB bandwidth of ~20 GHz and a high responsivity of 22 A/W. Such device can be monolithically integrated with other silicon photonic components on SOI substrates.