E. Abreu, D. Babich, E. Janod, S. Houver, B. Corraze, L. Cario, S. Johnson
{"title":"Mott绝缘子gata4se8的太赫兹驱动动力学","authors":"E. Abreu, D. Babich, E. Janod, S. Houver, B. Corraze, L. Cario, S. Johnson","doi":"10.1109/IRMMW-THz.2019.8874120","DOIUrl":null,"url":null,"abstract":"GaTa4 Se8 is a Mott insulator known to exhibit an electric Mott transition, characterized by a drop in electrical resistivity, when an electric field larger than 1 – 10 kV/cm is applied for a few tens of microseconds using electrodes deposited on the sample. Here, we show that a resistivity drop can be induced in this material within less than a picosecond. These dynamics occur after excitation by a high field THz pump pulse and persist for a few picoseconds, well beyond the duration of the pump pulse.","PeriodicalId":6686,"journal":{"name":"2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)","volume":"37 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"THz Driven Dynamics in Mott Insulator GaTa4 Se8\",\"authors\":\"E. Abreu, D. Babich, E. Janod, S. Houver, B. Corraze, L. Cario, S. Johnson\",\"doi\":\"10.1109/IRMMW-THz.2019.8874120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaTa4 Se8 is a Mott insulator known to exhibit an electric Mott transition, characterized by a drop in electrical resistivity, when an electric field larger than 1 – 10 kV/cm is applied for a few tens of microseconds using electrodes deposited on the sample. Here, we show that a resistivity drop can be induced in this material within less than a picosecond. These dynamics occur after excitation by a high field THz pump pulse and persist for a few picoseconds, well beyond the duration of the pump pulse.\",\"PeriodicalId\":6686,\"journal\":{\"name\":\"2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)\",\"volume\":\"37 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRMMW-THz.2019.8874120\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THz.2019.8874120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaTa4 Se8 is a Mott insulator known to exhibit an electric Mott transition, characterized by a drop in electrical resistivity, when an electric field larger than 1 – 10 kV/cm is applied for a few tens of microseconds using electrodes deposited on the sample. Here, we show that a resistivity drop can be induced in this material within less than a picosecond. These dynamics occur after excitation by a high field THz pump pulse and persist for a few picoseconds, well beyond the duration of the pump pulse.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
