{"title":"用于晶圆堆叠结构的对线不敏感通孔","authors":"Jinwoo Jeong, H. Kim, K. Chun","doi":"10.1109/TENCON.2008.4766810","DOIUrl":null,"url":null,"abstract":"An interconnection scheme which has the merits of align-insensitivity and wafer bonding compatibility is suggested for wafer stacked structure with the silicon through-wafer-via. The interconnection structures in the previous works using a prominent copper solder and metal reflow technique have alignment problems when wafers are bonded for stacking. The suggested modified interconnection scheme prevents from alignment problems by improving prominent copper solder structure and filling method of trench isolation in thorugh-wafer-via. The suggested interconnection structure is fabricated to show feasibility and mechanical wafer warpage is investigated.","PeriodicalId":22230,"journal":{"name":"TENCON 2008 - 2008 IEEE Region 10 Conference","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An align-insensitive through-wafer-via for wafer-stacked structure\",\"authors\":\"Jinwoo Jeong, H. Kim, K. Chun\",\"doi\":\"10.1109/TENCON.2008.4766810\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An interconnection scheme which has the merits of align-insensitivity and wafer bonding compatibility is suggested for wafer stacked structure with the silicon through-wafer-via. The interconnection structures in the previous works using a prominent copper solder and metal reflow technique have alignment problems when wafers are bonded for stacking. The suggested modified interconnection scheme prevents from alignment problems by improving prominent copper solder structure and filling method of trench isolation in thorugh-wafer-via. The suggested interconnection structure is fabricated to show feasibility and mechanical wafer warpage is investigated.\",\"PeriodicalId\":22230,\"journal\":{\"name\":\"TENCON 2008 - 2008 IEEE Region 10 Conference\",\"volume\":\"1 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TENCON 2008 - 2008 IEEE Region 10 Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.2008.4766810\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TENCON 2008 - 2008 IEEE Region 10 Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.2008.4766810","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An align-insensitive through-wafer-via for wafer-stacked structure
An interconnection scheme which has the merits of align-insensitivity and wafer bonding compatibility is suggested for wafer stacked structure with the silicon through-wafer-via. The interconnection structures in the previous works using a prominent copper solder and metal reflow technique have alignment problems when wafers are bonded for stacking. The suggested modified interconnection scheme prevents from alignment problems by improving prominent copper solder structure and filling method of trench isolation in thorugh-wafer-via. The suggested interconnection structure is fabricated to show feasibility and mechanical wafer warpage is investigated.