平面负能量场效应管中的电子-声子散射

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI:10.1109/SNW.2010.5562595

H. Pal, Dmitri E. Nikonov, Raseong Kim, Mark S. Lundstrom

{"title":"平面负能量场效应管中的电子-声子散射","authors":"H. Pal, Dmitri E. Nikonov, Raseong Kim, Mark S. Lundstrom","doi":"10.1109/SNW.2010.5562595","DOIUrl":null,"url":null,"abstract":"An approach to include elastic and inelastic electron-phonon scattering into the nonequilibrium Green's function (NEGF) framework that is computationally manageable and applicable to planar MOSFETs has been developed. By reformulating the NEGF equations in terms of integrated transverse momentum modes, the computational burden has been significantly reduced. This allows treatment of both quantum mechanics and dissipative electron-phonon scattering processes for device sizes from nanometers to microns. The formalism is rigorously benchmarked against semiclassical Monte Carlo transport.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electron-phonon scattering in planar MOSFETs with NEGF\",\"authors\":\"H. Pal, Dmitri E. Nikonov, Raseong Kim, Mark S. Lundstrom\",\"doi\":\"10.1109/SNW.2010.5562595\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An approach to include elastic and inelastic electron-phonon scattering into the nonequilibrium Green's function (NEGF) framework that is computationally manageable and applicable to planar MOSFETs has been developed. By reformulating the NEGF equations in terms of integrated transverse momentum modes, the computational burden has been significantly reduced. This allows treatment of both quantum mechanics and dissipative electron-phonon scattering processes for device sizes from nanometers to microns. The formalism is rigorously benchmarked against semiclassical Monte Carlo transport.\",\"PeriodicalId\":6433,\"journal\":{\"name\":\"2010 Silicon Nanoelectronics Workshop\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Silicon Nanoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2010.5562595\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562595","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

提出了一种将弹性和非弹性电子-声子散射纳入非平衡格林函数(NEGF)框架的方法，该方法在计算上易于管理，并适用于平面mosfet。通过将NEGF方程重新表述为积分横向动量模态，计算量大大减少。这允许处理量子力学和耗散电子-声子散射过程的器件尺寸从纳米到微米。形式主义严格地以半经典蒙特卡洛传输为基准。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Electron-phonon scattering in planar MOSFETs with NEGF

An approach to include elastic and inelastic electron-phonon scattering into the nonequilibrium Green's function (NEGF) framework that is computationally manageable and applicable to planar MOSFETs has been developed. By reformulating the NEGF equations in terms of integrated transverse momentum modes, the computational burden has been significantly reduced. This allows treatment of both quantum mechanics and dissipative electron-phonon scattering processes for device sizes from nanometers to microns. The formalism is rigorously benchmarked against semiclassical Monte Carlo transport.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助