{"title":"键和蚀刻绝缘体上硅的应变源评价","authors":"R. Egloff, T. Letavic, B. Greenberg, H. Baumgart","doi":"10.1016/0165-5817(95)82006-X","DOIUrl":null,"url":null,"abstract":"<div><p>The incorporation of strain is inherent in the manufacture of bond and etchback silicon-on-insulator (BESOI) substrates. In this paper, the principal sources of strain are identified and the magnitude of the strain is estimated. The strain sources discussed include dopant (boron) induced lattice contraction of the etchstop layer, differential thermal expansion, and interfacial microroughness at the time of bonding. Reduction or elimination of SOI layer degradation from some of these strain sources is possible.</p></div>","PeriodicalId":101018,"journal":{"name":"Philips Journal of Research","volume":"49 1","pages":"Pages 125-138"},"PeriodicalIF":0.0000,"publicationDate":"1995-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0165-5817(95)82006-X","citationCount":"3","resultStr":"{\"title\":\"Evaluation of strain sources in bond and etchback silicon-on-insulator\",\"authors\":\"R. Egloff, T. Letavic, B. Greenberg, H. Baumgart\",\"doi\":\"10.1016/0165-5817(95)82006-X\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The incorporation of strain is inherent in the manufacture of bond and etchback silicon-on-insulator (BESOI) substrates. In this paper, the principal sources of strain are identified and the magnitude of the strain is estimated. The strain sources discussed include dopant (boron) induced lattice contraction of the etchstop layer, differential thermal expansion, and interfacial microroughness at the time of bonding. Reduction or elimination of SOI layer degradation from some of these strain sources is possible.</p></div>\",\"PeriodicalId\":101018,\"journal\":{\"name\":\"Philips Journal of Research\",\"volume\":\"49 1\",\"pages\":\"Pages 125-138\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0165-5817(95)82006-X\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Philips Journal of Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/016558179582006X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Philips Journal of Research","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/016558179582006X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of strain sources in bond and etchback silicon-on-insulator
The incorporation of strain is inherent in the manufacture of bond and etchback silicon-on-insulator (BESOI) substrates. In this paper, the principal sources of strain are identified and the magnitude of the strain is estimated. The strain sources discussed include dopant (boron) induced lattice contraction of the etchstop layer, differential thermal expansion, and interfacial microroughness at the time of bonding. Reduction or elimination of SOI layer degradation from some of these strain sources is possible.
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