采用低温牺牲工艺的SAW器件的P3I-3晶圆级芯片封装

K. Koh, T. Yamazaki, K. Hohkawa
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引用次数: 3

摘要

本文报道了基于低温牺牲工艺的SAW器件晶圆级芯片尺寸封装(WL-CSP)工艺的基本研究。我们选用干膜光刻胶作为牺牲层,因为它具有处理温度低(<120度)、易涂覆在晶圆片表面、易被有机溶液去除等优点。我们提出了几种不同用途的干膜光刻胶工艺。我们研究了不同的加工条件,成功地制作了一个小尺寸的空腔作为SAW器件的有源区。实验结果证实了干膜光刻胶用于SAW器件WL-CSP技术的可行性。
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P3I-3 Wafer Level Chip Size Packaging of SAW Devices Using Low Temperature Sacrifice Process
In this paper, we report a basic study on wafer level chip size packaging (WL-CSP) process of SAW devices using low temperature sacrifice process. We used the dry film photoresist as sacrifice layer because it has advantage such as low treating temperature (<120 degree), easily coating on the surface of wafer and easily to removal by organic solution. We proposed several processes using dry film photoresist for different purpose. We investigated various processing conditions and successfully fabricated a cavity with small size as active area of the SAW device. The experimental results confirmed feasibility of the dry film photoresist used in WL-CSP technology of SAW device.
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