采用半导体开关的高重复脉冲电压发生器的研制

Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358) Pub Date : 1999-06-27 DOI:10.1109/PPC.1999.823637

K. Okamura, S. Kuroda, M. Maeyama

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引用次数: 16

摘要

采用大功率晶闸管半导体开关和lc谐振充电方法，研制了高重复冲击电压发生器。在该系统中，采用改进的二极管充电电路，降低了充电电路的阻抗，实现了对二极管和电阻电路元件的均匀冲击电压。在五段IG上，验证了50微秒的高速充电特性和2 kHz重复操作的初步结果。

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Development of the high repetitive impulse voltage generator using semiconductor switches

Using semiconductor switches of high power thyristor and L-C resonant charging method, we developed a high repetitive impulse voltage generator. In this system, an improved charging circuit with diodes is adopted to lower its impedance of charging circuit and to implement uniform impulse voltage to circuit elements of diodes and resistances. With a five stage IG, high speed charging feature of 50 micro sec and preliminary result of 2 kHz repetitive operation are confirmed.

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Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358)

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