非金属掺杂CdS单层的感应磁性

Lalmuan Chhana, R. Tiwari, L. Zuala, Dibya Prakash Rai
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摘要

本文利用Perdew、Burke和Ernzerhof (PBE-sol)对固体修正的广义梯度近似密度泛函理论从头算,研究了掺杂非金属原子B、C和N的CdS单层的结构、电子和磁性能。结果表明,掺杂B、C和n的CdS单层单体单体的总磁矩分别为~1.0µB、~2.0µB和~1.0µB。随着掺杂物电负性的增加,掺杂物的局部磁矩趋于局域化,掺杂物的2p态逐渐向基体cd的价带最大值移动。我们的研究还证实了通过取代S原子引入杂质原子可以产生半金属磁性。我们的研究表明,纳米元素的掺杂是改变CdS单层磁性和电子性能的有效方法。
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Induced Magnetism in Non-metal Doped CdS Monolayer
The structural, electronic, and magnetic properties of CdS monolayer doped with non-metallic (NM) atoms B, C and N are studied based on ab initio density functional theory calculations within the generalized gradient approximation as revised for solids by Perdew, Burke and Ernzerhof (PBE-sol). The total magnetic moments per supercell of B, C and N-doped CdS monolayer is found to be ~1.0 µB, ~2.0 µB and ~1.0 µB respectively. As the electronegativity of the dopant increases, the local magnetic moment tends to localize and 2p-states of the dopants gradually move towards the valence band maximum of the host CdS. Our study also confirmed that the introduction of impurity atom by substitution of S atom results in half-metallic magnetism. Our investigation concludes that doping of NM element is an efficient way of altering the magnetic and electronic properties in CdS monolayer.
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