衬底脉冲偏置电压对TiN/Cu纳米复合膜微观结构和力学耐磨性能的影响

IF 0.6 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY 稀有金属材料与工程 Pub Date : 2018-11-01 DOI:10.1016/S1875-5372(18)30233-9
Zhao Yanhui , Zhao Shengsheng , Ren Ling , V.V. Denisov , N.N. Koval , Yang Ke , Yu Baohai
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引用次数: 5

摘要

采用轴向磁场增强电弧离子镀技术(AMFE-AIP)在高速钢(HSS)衬底上沉积了TiN/Cu纳米复合膜。通过x射线光电子能谱(XPS)、x射线衍射(XRD)、纳米压痕和磨损测量,分别研究了衬底偏置电压对薄膜化学成分、微观结构、力学和摩擦学性能的影响。结果表明,随着脉冲偏置电压的增加,Cu含量先增加后降低,在% ~ 2.1 %处为一个较低的值。XRD结果表明,所有膜中均存在TiN相,未发现Cu相。随着脉冲偏置电压的增大,薄膜的择优取向发生显著变化。在−200 V的脉冲偏置电压下,薄膜的硬度最大值为36 GPa,对应于含Cu 1.6 %的薄膜。与纯TiN膜相比,TiN膜中Cu的加入显著提高了TiN膜的耐磨性。
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Effect of Substrate Pulse Bias Voltage on the Microstructure and Mechanical and Wear-resistant Properties of TiN/Cu Nanocomposite Films

TiN/Cu nanocomposite films were deposited on high-speed steel (HSS) substrates by axial magnetic field-enhanced arc ion plating (AMFE-AIP). The effects of substrate bias voltage on chemical composition, microstructure, mechanical and tribological properties of the films were investigated by X-ray photoelectrons spectroscopy (XPS), X-ray diffraction (XRD), nanoindentation and wear measurements, respectively. The results show that the Cu content increases first and then decreases with the increase of the pulse bias voltage, being a low value in the range of 1.3 at%∼2.1 at%. XRD results show that only the TiN phase appears in all the films, and no Cu phase is observed. The preferred orientation of the films changes significantly with the increasing pulse bias voltage. A maximum value of hardness of 36 GPa is obtained under a pulse bias voltage of −200 V, corresponding to the film containing 1.6 at% Cu. Compared to the pure TiN film, the Cu addition in TiN films significantly improves the wear resistance.

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来源期刊
稀有金属材料与工程
稀有金属材料与工程 工程技术-材料科学:综合
CiteScore
1.30
自引率
57.10%
发文量
17973
审稿时长
4.2 months
期刊介绍:
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