一种高速闪存模数转换器

Q3 Medicine Koomesh Pub Date : 2018-08-01 DOI:10.1109/I-SMAC.2018.8653782
K. Kumar, K. Krishna, K. Raghavendra, K. Harish
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引用次数: 1

摘要

本文介绍了一种基于180nm数字CMOS技术的4b闪存模数转换器(ADC)的设计与实现。所提出的flash ADC利用电阻阶跃逻辑网络、高速比较器和编码器逻辑将给定的连续输入信号转换为输出二进制代码。flash ADC采用了一种新颖的编码器,该编码器使用伪动态CMOS逻辑实现,与以前的其他技术相比,该编码器使用了更少的晶体管。在不需要时间交错技术的情况下,所提出的ADC能够以其全采样率工作。当电源电压为1.8V时,所设计的闪存ADC功耗为0.686mW。该电路的工作速度为10GHz,模拟的积分非线性误差(INL)和微分非线性误差(DNL)分别在0.1/-0.02LSB和0.33/-0.12LSB之间。它的有效面积为0.32mm2。
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A High Speed Flash Analog to Digital Converter
This paper presents the design and implementation of a 4-b Flash Analog to Digital Converter (ADC) in 180nm digital CMOS technology. The proposed flash ADC utilizes resistive ladder logic network, high speed comparators and a encoder logic to convert the given continuous input signal into output binary code. The flash ADC utilizes a novel encoder realized using pseudo dynamic CMOS logic which has been implemented with fewer transistors compared to the previous other techniques. Without the need of time interleaving technique, the proposed ADC is capable of operating at its full sampling rate. The designed flash ADC consumes 0.686mW when operated from a power supply voltage of 1.8V. The operating speed of this circuit is 10GHz and the simulated integral non-linearity error (INL) and differential non-linearity error (DNL) are between 0.1/-0.02LSB and 0.33/-0.12LSB respectively. It occupies an effective area of 0.32mm2.
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来源期刊
Koomesh
Koomesh Medicine-Medicine (all)
CiteScore
0.80
自引率
0.00%
发文量
0
审稿时长
24 weeks
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