Analysis of the hysteresis effect in Perovskite solar cells for the traditional and inverted architectures

In this study, the traditional and inverted architecture MAPbI3-based solar cells were investigated and the hysteresis characteristics of Perovskite solar cells (PSCs) caused by ion migration effects were modeled. Different operation conditions with time dependent ion drift-diffusion model were modeled, which has shown a great relevance to the I-V hysteresis characteristics of PSCs. It is depending on (1) bias scan rate; (2) concentration of ion in MAPbI3 material, and (3) carrier lifetime of MAPbI3. Simulation results show that traditional architecture PSCs have larger hysteresis effects. And the difference of the traditional and inverted structures is due to the difference of built-in voltage inside the devices, which induces (I−) ion migration to transport layer and effect the depletion field.