铝基三元和四元准晶体的制备及其电学性能

K. Kimura, H. Yamane, T. Hashimoto, S. Takeuchi
{"title":"铝基三元和四元准晶体的制备及其电学性能","authors":"K. Kimura,&nbsp;H. Yamane,&nbsp;T. Hashimoto,&nbsp;S. Takeuchi","doi":"10.1016/0025-5416(88)90372-2","DOIUrl":null,"url":null,"abstract":"<div><p>An addition of a small amount of silicon, ruthenium, molybdenum or niobium to AlMn and AlV alloy systems (manganese has a magnetic moment while vanadium has not) causes a decrease in the amount of second phase, sharpening of the X-ray diffraction peaks and an increase in the crystallization temperature. The electrical resistivities of the quasi-crystalline AlMn alloys are 800–1000 μΩ cm and have negative temperature coefficients from 1 K to room temperature. Such high resistivities must be due to an extremely short mean free path of the electrons. In the low temperature region (less than 50 K), the resistivity π of the quasi-crystalline AlMn alloys increases rapidly with decreasing temperature T. The resistivity is proportional to −log T or T<sup>−a</sup> on the higher temperature side of this region and to −T<sup>1/2</sup> on the lower side. In contrast, π for the quasicrystalline Al-V alloys is 200–400 μΩ cm and is nearly constant from 1 k to 77 K. The behaviour of the resistivity for quasi-crystalline Al-Mn and Al-V alloys cannot be simply interpreted by ordinary mechanisms. Attempts have been made to interpret the behaviour by tunnelling and variable-range hopping conduction in the critical but not extended or localized states which are considered to be the characteristic electronic states in quasi-crystals.</p></div>","PeriodicalId":100890,"journal":{"name":"Materials Science and Engineering","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1988-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0025-5416(88)90372-2","citationCount":"16","resultStr":"{\"title\":\"Preparation and electrical properties of aluminium-based ternary and quaternary quasi-crystals\",\"authors\":\"K. Kimura,&nbsp;H. Yamane,&nbsp;T. Hashimoto,&nbsp;S. Takeuchi\",\"doi\":\"10.1016/0025-5416(88)90372-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>An addition of a small amount of silicon, ruthenium, molybdenum or niobium to AlMn and AlV alloy systems (manganese has a magnetic moment while vanadium has not) causes a decrease in the amount of second phase, sharpening of the X-ray diffraction peaks and an increase in the crystallization temperature. The electrical resistivities of the quasi-crystalline AlMn alloys are 800–1000 μΩ cm and have negative temperature coefficients from 1 K to room temperature. Such high resistivities must be due to an extremely short mean free path of the electrons. In the low temperature region (less than 50 K), the resistivity π of the quasi-crystalline AlMn alloys increases rapidly with decreasing temperature T. The resistivity is proportional to −log T or T<sup>−a</sup> on the higher temperature side of this region and to −T<sup>1/2</sup> on the lower side. In contrast, π for the quasicrystalline Al-V alloys is 200–400 μΩ cm and is nearly constant from 1 k to 77 K. The behaviour of the resistivity for quasi-crystalline Al-Mn and Al-V alloys cannot be simply interpreted by ordinary mechanisms. Attempts have been made to interpret the behaviour by tunnelling and variable-range hopping conduction in the critical but not extended or localized states which are considered to be the characteristic electronic states in quasi-crystals.</p></div>\",\"PeriodicalId\":100890,\"journal\":{\"name\":\"Materials Science and Engineering\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0025-5416(88)90372-2\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science and Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0025541688903722\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0025541688903722","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

摘要

在AlMn和AlV合金体系中加入少量的硅、钌、钼或铌(锰有磁矩,而钒没有)会导致第二相的数量减少,x射线衍射峰锐化,结晶温度升高。AlMn准晶合金的电阻率为800 ~ 1000 μΩ cm,在1 K至室温范围内具有负的温度系数。如此高的电阻率一定是由于电子的平均自由程极短。在低温区(小于50 K),准晶AlMn合金的电阻率π随温度T的降低而迅速增大,该区域高温侧的电阻率与−logt或T−a成正比,低温侧的电阻率与−T1/2成正比。相比之下,准晶Al-V合金的π为200-400 μΩ cm,在1 k到77 k之间几乎是恒定的。准晶Al-Mn和Al-V合金的电阻率行为不能简单地用普通机制来解释。在准晶体中被认为是特征电子态的临界但非扩展或局域状态下,已经尝试通过隧道和变范围跳变传导来解释这种行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Preparation and electrical properties of aluminium-based ternary and quaternary quasi-crystals

An addition of a small amount of silicon, ruthenium, molybdenum or niobium to AlMn and AlV alloy systems (manganese has a magnetic moment while vanadium has not) causes a decrease in the amount of second phase, sharpening of the X-ray diffraction peaks and an increase in the crystallization temperature. The electrical resistivities of the quasi-crystalline AlMn alloys are 800–1000 μΩ cm and have negative temperature coefficients from 1 K to room temperature. Such high resistivities must be due to an extremely short mean free path of the electrons. In the low temperature region (less than 50 K), the resistivity π of the quasi-crystalline AlMn alloys increases rapidly with decreasing temperature T. The resistivity is proportional to −log T or T−a on the higher temperature side of this region and to −T1/2 on the lower side. In contrast, π for the quasicrystalline Al-V alloys is 200–400 μΩ cm and is nearly constant from 1 k to 77 K. The behaviour of the resistivity for quasi-crystalline Al-Mn and Al-V alloys cannot be simply interpreted by ordinary mechanisms. Attempts have been made to interpret the behaviour by tunnelling and variable-range hopping conduction in the critical but not extended or localized states which are considered to be the characteristic electronic states in quasi-crystals.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Author index Subject index Editorial Board Editorial Conference calendar
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1