环己烷-甲基环戊烷混合物中硫脲加合物的结晶生长

Kwang-Joo Kim , Jung-Min Lee , Seung-Kon Ryu
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引用次数: 1

摘要

在间歇冷却结晶器中研究了以环己烷和甲基环戊烷(MCP)混合物为基体形成的硫脲加合物的生长动力学。考察了客体浓度对加合物生长速率和溶解速率的影响。考察并比较了真晶(硫脲)的生长速率和客体的夹杂率。从在冷却结晶器中进行的积分模式批实验中评估晶体生长动力学的方法需要根据时间确定过饱和和温度的前两个初始导数。硫脲加合物在过饱和度下的生长顺序分别为0.87、0.86和0.84,环己烷-硫脲加合物、环己烷- mcp -硫脲加合物和mcp -硫脲加合物的活化能分别为75.3、68.3和60.7 kJ/mol。此外,对溶液中客体和主体的组成谱的研究表明,硫脲的内合是由硫脲分子的整合而不是客体分子的扩散控制的。
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Crystal growth of thiourea adducts with cyclohexane-methylcyclopentane mixture

The growth kinetics of thiourea adducts formed with the guests of cyclohexane and methylcyclopentane (MCP) mixtures by adductive crystallization were studied in a batch cooling crystallizer. The effects of the guest concentration on the growth rate and the dissolution rate of adducts were investigated. The growth rate of true crystal (thiourea) and the inclusion rate of guests were also investigated and compared. The method used to evaluate the crystal growth kinetics from the integral mode batch experiments performed in a cooling crystallizer required the determination of the first two initial derivatives of supersaturation and temperature according to time. The orders of the growth for thiourea adducts with respect to supersaturation were found to be 0.87, 0.86 and 0.84, and the activation energies of thiourea adducts were determined as about 75.3, 68.3 and 60.7 kJ/mol for cyclohexane-thiourea adduct, cyclohexane-MCP-thiourea adduct, and MCP-thiourea adduct, respectively. Furthermore, studies on the composition profile for guest and host in the solution suggest that thiourea adduction is controlled by the integration of thiourea molecules and not by the diffusion of the guest molecules.

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