改性n型和p型Si(111)表面固定钼基金属团簇层的电化学和电荷输运行为

B. Fabre, S. Cordier, Y. Molard, C. Perrin, S. Ababou-Girard, C. Godet
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引用次数: 39

摘要

八面体钼簇芯[Mo6I8]4+通过与端吡啶有机单分子层(2 × 1014 cm−2)的络合作用在p型和n型Si(111)表面的顶端位置,该层先前与端氢Si(111)共价结合。该接枝过程产生了约4nm厚的mo6端接层。p型和n型样品的XPS结果相似,表明接枝效率和接枝层的组成与表面掺杂类型无关。10 nm2的簇积表明Si(111)表面有相当密集的分子堆积。与饱和甘汞电极(SCE)相比,mo6修饰的表面在0.92 V处有一个不可逆氧化峰,n型和p型表面的平坦带电位Efb值分别为- 0.55±0.05 V和0.04±0.05 V。Mo6对硅表面的衍生化引入了表面稳态。
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Electrochemical and Charge Transport Behavior of Molybdenum-Based Metallic Cluster Layers Immobilized on Modified n- and p-Type Si(111) Surfaces
Octahedral molybdenum cluster cores [Mo6I8]4+ have been attached in apical positions to p- and n-type Si(111) surfaces through complexation with a pyridine-terminated organic monolayer (2 × 1014 cm−2), which was previously covalently bound to hydrogen-terminated Si(111). This grafting procedure resulted in about a 4 nm thick Mo6-terminated layer. Similar XPS results were found for p- and n-type samples, suggesting that the grafting efficiency and composition of the resulting layers do not depend significantly on the doping type of the surface. The cluster footprint of 10 nm2 indicates a fairly dense molecular packing on the Si(111) surface. The electrochemistry of such Mo6-modified surfaces in acetonitrile was characterized by a single irreversible oxidation peak at 0.92 V versus saturated calomel electrode (SCE) and flat band potential Efb values of −0.55 ± 0.05 V and 0.04 ± 0.05 V for the modified n- and p-type surfaces, respectively. The derivatization of silicon surfaces by Mo6 introduces surface stat...
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