利用太阳炉对喷雾热解法制备氧化钴薄层温度的研究

A. Gharbi, S. Benramache, Lahcen Fella, Aziez Zedouri
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摘要

摘要利用自制的太阳能聚光器(烘箱),采用喷雾热解法在玻璃基板上制备了氧化钴(Co3O4)薄膜。采用不同的加工温度(300°C、350°C和400°C),通过x射线衍射(XRD)、紫外可见光谱和霍尔效应测量系统分析了不同样品的结构、光学和电学性质。x射线衍射观察表明,所制备的薄膜均形成立方晶体,薄膜结构为低温下沿(311)轴优先取向的单相,高温下沿(111)轴优先取向。根据加工温度的不同,我们的产品的晶粒尺寸在(22.62nm - 66.19nm)之间变化。测量了所得晶体的光学带隙。所得晶体的光学禁带结果表明,每个元素(Eg1和Eg2)的值都有两个禁带。我们观察到,随着制作温度的升高,有效禁带的值分别增加了2.547eV和3.0731eV。此外,随着生产温度的升高,所生产的薄膜的乌尔巴赫参数在162.20meV到360.81meV之间变化。最后,根据生产温度的变化,所生产的薄膜的电导率值为(1.090 [(Ω.cm)−1]至1.853 [(Ω.cm)−1],电阻率值为1.431 (Ω.cm)至1.853 (Ω.cm)。
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Investigation of the Temperature on the Thin Layers of Cobalt Oxide Produced by the Spray Pyrolysis Method Using a Solar Oven
Abstract Thin films of cobalt oxide (Co3O4) were prepared on glass substrates by the spray pyrolysis method using a solar concentrator (oven) manufactured in our laboratory. We used different processing temperatures (300° C, 350° C and 400° C). The structural, optical and electrical properties of the different samples were analyzed by X-ray diffraction (XRD), UV-Visible spectroscopy and the Hall effect measurement system. X-ray diffraction observations revealed that cubic crystals are created in all films produced, and the film structure is that of a single phase created with preferential orientation along the (311) axis in films at low temperatures, and the axis (111) for high temperatures. The grain sizes of our products vary between (22.62nm and 66.19nm), depending on the processing temperature. The optical band gap of the crystals obtained was measured. The results of the optical forbidden bands of the crystals obtained, indicated two bands of the values for each element (Eg1 and Eg2). We observed that the values of the effective optical forbidden bands increase by 2.547eV and 3.0731eV with the increase in the production temperature., In addition the film produced experiences a decrease in the Urbach parameters which vary between 162.20meV and 360.81meV depending on the increase in production temperatures. Finally, the films produced have electrical conductivity values of (1.090 [(Ω.cm)−1] to 1.853 [(Ω.cm)−1] and electrical resistivity values of 1.431 (Ω.cm) at 1.853 (Ω.cm), depending on the variation in the production temperature.
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