{"title":"为汽车点火系统设计的igbt","authors":"L. Mamileti, S. P. Robb, Z. Shen, A. Taomoto","doi":"10.1109/PESC.1996.548841","DOIUrl":null,"url":null,"abstract":"In recent years the IGBT has become the device of choice for driving ignition coils. The IGBT is a high-voltage, high-current device that is well suited to ignition applications which require 400 volts and 10 amps. Polysilicon diodes are integrated with the IGBT to form a high-voltage, gate-collector clamp for switching an inductive load. Second generation ignition IGBTs have been designed that meet ignition system requirements while using 40% less silicon than the previous generation.","PeriodicalId":19979,"journal":{"name":"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference","volume":"18 1","pages":"1907-1912 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1996-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"IGBTs designed for automotive ignition systems\",\"authors\":\"L. Mamileti, S. P. Robb, Z. Shen, A. Taomoto\",\"doi\":\"10.1109/PESC.1996.548841\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In recent years the IGBT has become the device of choice for driving ignition coils. The IGBT is a high-voltage, high-current device that is well suited to ignition applications which require 400 volts and 10 amps. Polysilicon diodes are integrated with the IGBT to form a high-voltage, gate-collector clamp for switching an inductive load. Second generation ignition IGBTs have been designed that meet ignition system requirements while using 40% less silicon than the previous generation.\",\"PeriodicalId\":19979,\"journal\":{\"name\":\"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"18 1\",\"pages\":\"1907-1912 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1996.548841\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1996.548841","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In recent years the IGBT has become the device of choice for driving ignition coils. The IGBT is a high-voltage, high-current device that is well suited to ignition applications which require 400 volts and 10 amps. Polysilicon diodes are integrated with the IGBT to form a high-voltage, gate-collector clamp for switching an inductive load. Second generation ignition IGBTs have been designed that meet ignition system requirements while using 40% less silicon than the previous generation.
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