{"title":"低温等离子体增强CVD合成压电活性ZnO薄膜","authors":"T. V. Tabenskaya, V. P. Ovsyannikov, E. Mazurenko","doi":"10.1051/JPHYSCOL:1995586","DOIUrl":null,"url":null,"abstract":"Plasma-enhanced organometallic chemical vapour deposition process has been developed to obtain piezoelectric ZnO films with a highly preferred orientation of the crystallites on sapphire and on SiO 2 /Si substrates. The volatile organic precursor of zinc acetylacetonate Zn(AA) 2 decomposes under r.f. discharge plasma at low temperature in controlled atmosphere of Ar+O 2 gas mixture. The optimal deposition conditions of high quality ZnO film were deduced and investigated. The films obtained have high resistivity and transparency.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"7 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Low Temperature Plasma Enhanced CVD Synthesis of Piezoactive ZnO Films\",\"authors\":\"T. V. Tabenskaya, V. P. Ovsyannikov, E. Mazurenko\",\"doi\":\"10.1051/JPHYSCOL:1995586\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Plasma-enhanced organometallic chemical vapour deposition process has been developed to obtain piezoelectric ZnO films with a highly preferred orientation of the crystallites on sapphire and on SiO 2 /Si substrates. The volatile organic precursor of zinc acetylacetonate Zn(AA) 2 decomposes under r.f. discharge plasma at low temperature in controlled atmosphere of Ar+O 2 gas mixture. The optimal deposition conditions of high quality ZnO film were deduced and investigated. The films obtained have high resistivity and transparency.\",\"PeriodicalId\":17944,\"journal\":{\"name\":\"Le Journal De Physique Colloques\",\"volume\":\"7 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Le Journal De Physique Colloques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/JPHYSCOL:1995586\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Le Journal De Physique Colloques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JPHYSCOL:1995586","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low Temperature Plasma Enhanced CVD Synthesis of Piezoactive ZnO Films
Plasma-enhanced organometallic chemical vapour deposition process has been developed to obtain piezoelectric ZnO films with a highly preferred orientation of the crystallites on sapphire and on SiO 2 /Si substrates. The volatile organic precursor of zinc acetylacetonate Zn(AA) 2 decomposes under r.f. discharge plasma at low temperature in controlled atmosphere of Ar+O 2 gas mixture. The optimal deposition conditions of high quality ZnO film were deduced and investigated. The films obtained have high resistivity and transparency.
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