锂基半heusler合金的电子和热电性能:DFT研究

F. Issaad, A. Maafa, H. Rozale, M. Boukli Hacene, A. Bouabça
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摘要

本文研究了半heusler LiCrZ (Z = C, N, Si, P)材料II型相的电子、弹性和热电性能,该结构中原子位置为X (1/2,1/2,1/2), Y(0,0,0)和Z(1/4,1/4,1/4)。II型结构的铁磁态是所有合金中最稳定的相。通过对弹性常数的计算,我们发现只有II型相的LiCrSi和LiCrP合金在平衡a0和半金属ahm晶格常数下的力学稳定性条件得到了验证,这表明这两种化合物是可以通过实验合成的。我们还应该提到,在II型结构中,LiCrSi和LiCrP化合物的半金属行为分别是通过将平衡晶格常数应变2%和6%获得的。在ahm下,由于这两个体系具有完全的自旋极化和总磁矩的整数值,从而确定了这两个体系是真正的半金属。当Z = Si和Z = p时,它们的居里温度分别达到了3μB和4μB。利用平均场近似(MFA)测定了II型结构的居里温度,估计其值分别为456.2 K和302.8 K。最后,用经典玻尔兹曼理论探讨了热电性能。在低温下,LiCrSi和LiCrP的优值分别达到0.73和0.93。可观的ZT值和所有计算的物理性质使这两个系统有希望成为热电应用的候选者。
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Electronic and Thermoelectric Properties of Li-Based Half-Heusler Alloys: A DFT Study
Abstract In this paper, we have studied the electronic, elastic and thermoelectric properties of the half-Heusler LiCrZ (Z = C, N, Si, and P) materials in Type II phase, in this structure the atomic occupations are X (1/2,1/2,1/2), Y (0,0,0) and Z(1/4,1/4,1/4). The ferromagnetic state of Type II structure was found to be the most stable phase for all studied alloys. After calculating the elastic constants, we found out that the conditions of mechanical stability were verified only for LiCrSi and LiCrP alloys in Type II phase, at both equilibrium a0 and half metallic ahm lattice constants, which indicates that these two compounds can be synthesized experimentally. We should also mention that the half metallic behavior in Type II structure, for LiCrSi and LiCrP compounds, was obtained by straining the equilibrium lattice constants by 2% and 6%, respectively. At ahm, these two systems were identified to be true half metals due to their complete spin polarization and integer value of total magnetic moment. These last ones have reached 3μB per unit cell when Z = Si, and 4μB when Z = P. Using the mean field approximation (MFA), the Curie temperatures of Type II structure were also determined, where the values are estimated to be 456.2 K and 302.8 K, respectively. Finally, the thermoelectric performance has been explored by the classical Boltzmann theory. At low temperatures, the figure of merit has reached 0.73 and 0.93 for LiCrSi and LiCrP, respectively. The considerable ZT values and all calculated physical properties make these two systems promising candidates for thermoelectric applications.
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