Ashok Kumar, T. Mizutani, K. Shimizu, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto
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Origin of “current-onset voltage” variability in scaled MOSFETs
Present work analyzes the cause of “current-onset voltage” variability, which has been newly found to largely affect drain current variability [1]. It is found by 3D device simulation that the “current-onset voltage” variability is determined by how largely the channel potential fluctuates by random dopant disposition. Reducing RDF will suppress both threshold voltage and current-onset voltage variability as well.
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