S. Gunapala, C. Hill, A. D'Souza, C. Masterjohn, S. Babu, P. Ghuman, Sir Rafol, D. Ting, A. Soibel, A. Khoshakhlagh, S. Keo, B. Pepper, A. Fisher, E. Luong
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引用次数: 0
摘要
在本报告中,我们将报告我们最近在使用屏障红外探测器(BIRD)器件架构实现基于Antimonides ii型应变层超晶格(T2SLS)的红外光电探测器的高性能方面所做的努力。最近出现的屏障红外探测器,如nBn[1]和XBn[2],导致了中波红外(MWIR)和长波红外(LWIR)探测器,其工作温度比以前在III-V半导体基础上的MWIR和LWIR探测器高得多。初始nBn器件采用生长在InAs衬底上的InAs吸收体,或生长在GaSb衬底上的晶格匹配的InAsSb合金,截止波长分别为~3.2µm和~4µm。虽然这些探测器可以在比现有的基于InSb的MWIR探测器更高的温度下工作,但它们的光谱响应不能覆盖整个(3 - 5.5 μ m) MWIR大气透射窗口。也有基于InAs/GaSb ii型超晶格吸收剂的nBn探测器[3]。
Long-Wavelength Infrared Digital Focal Plane Arrays for Earth Remote Sensing Applications
In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II strained-layer superlattice (T2SLS) based infrared photodetectors using the barrier infrared detector (BIRD) device architecture. The recent emergence of barrier infrared detectors such as the nBn [1] and the XBn [2] have resulted in mid-wave infrared (MWIR) and long-wave infrared (LWIR) detectors with substantially higher operating temperatures than previously available in III-V semiconductor based MWIR and LWIR detectors. The initial nBn devices used either InAs absorber grown on InAs substrate, or lattice-matched InAsSb alloy grown on GaSb substrate, with cutoff wavelengths of ~3.2 µm and ~4 µm, respectively. While these detectors could operate at much higher temperatures than existing MWIR detectors based on InSb, their spectral responses do not cover the full (3 – 5.5 µm) MWIR atmospheric transmission window. There also have been nBn detectors based on the InAs/GaSb type-II superlattice absorber [3] .