{"title":"高击穿电压(> 1000 V)下圆形β- ga2o3 mosfet的特性","authors":"K. Cho, J. Mun, Woojin Chang, Hyun-Wook Jung","doi":"10.4313/JKEM.2020.33.1.78","DOIUrl":null,"url":null,"abstract":"In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga2O3 are demonstrated. A Si-doped Ga2O3 epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga2O3 substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 μm, a source-drain spacing of 20 μm, and a gate width of 523 μm. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga2O3 for power device applications including electric vehicles, railways, and renewable energy.","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characteristics of Circular β-Ga 2 O 3 MOSFETs with High Breakdown Voltage (>1,000 V)\",\"authors\":\"K. Cho, J. Mun, Woojin Chang, Hyun-Wook Jung\",\"doi\":\"10.4313/JKEM.2020.33.1.78\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga2O3 are demonstrated. A Si-doped Ga2O3 epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga2O3 substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 μm, a source-drain spacing of 20 μm, and a gate width of 523 μm. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga2O3 for power device applications including electric vehicles, railways, and renewable energy.\",\"PeriodicalId\":17325,\"journal\":{\"name\":\"Journal of The Korean Institute of Electrical and Electronic Material Engineers\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of The Korean Institute of Electrical and Electronic Material Engineers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4313/JKEM.2020.33.1.78\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4313/JKEM.2020.33.1.78","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在这项研究中，证明了在掺硅、mbe生长的β-Ga2O3上制备的mosfet。采用分子束外延(MBE)技术，在掺铁、半绝缘的1.5 cm × 1 cm Ga2O3衬底上生长出掺硅的Ga2O3外延层。所制器件为栅极长度为3 μm、源漏间距为20 μm、栅极宽度为523 μm的圆形mosfet。该器件具有良好的掐断特性、约2.7×10的高通断漏流比和1080 V的高击穿电压，证明了Ga2O3在电力器件中的应用潜力，包括电动汽车、铁路和可再生能源。
Characteristics of Circular β-Ga 2 O 3 MOSFETs with High Breakdown Voltage (>1,000 V)
In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga2O3 are demonstrated. A Si-doped Ga2O3 epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga2O3 substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 μm, a source-drain spacing of 20 μm, and a gate width of 523 μm. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga2O3 for power device applications including electric vehicles, railways, and renewable energy.
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