{"title":"用于射频功率传输的宽带推挽E类放大器","authors":"Zikang Tong, J. Rivas-Davila","doi":"10.1109/COMPEL52896.2023.10220982","DOIUrl":null,"url":null,"abstract":"This paper presents the design and implementation of a 13.56 MHz push-pull Class E power amplifier with broad-band capabilities. The Class E amplifier utilizes SiC MOSFETs with a custom current-source resonant gate driver. Because the amplifier is a push-pull structure, we design and implement a balun that converts the differential output into a ground-referenced output. This work experimentally demonstrates the proposed amplifier delivering over 1 kW power to a 50 $\\Omega$ load impedance.","PeriodicalId":55233,"journal":{"name":"Compel-The International Journal for Computation and Mathematics in Electrical and Electronic Engineering","volume":"44 1","pages":"1-7"},"PeriodicalIF":1.0000,"publicationDate":"2023-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wideband Push-Pull Class E Amplifier for RF Power Delivery\",\"authors\":\"Zikang Tong, J. Rivas-Davila\",\"doi\":\"10.1109/COMPEL52896.2023.10220982\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and implementation of a 13.56 MHz push-pull Class E power amplifier with broad-band capabilities. The Class E amplifier utilizes SiC MOSFETs with a custom current-source resonant gate driver. Because the amplifier is a push-pull structure, we design and implement a balun that converts the differential output into a ground-referenced output. This work experimentally demonstrates the proposed amplifier delivering over 1 kW power to a 50 $\\\\Omega$ load impedance.\",\"PeriodicalId\":55233,\"journal\":{\"name\":\"Compel-The International Journal for Computation and Mathematics in Electrical and Electronic Engineering\",\"volume\":\"44 1\",\"pages\":\"1-7\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2023-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Compel-The International Journal for Computation and Mathematics in Electrical and Electronic Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1109/COMPEL52896.2023.10220982\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"COMPUTER SCIENCE, INTERDISCIPLINARY APPLICATIONS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Compel-The International Journal for Computation and Mathematics in Electrical and Electronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/COMPEL52896.2023.10220982","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, INTERDISCIPLINARY APPLICATIONS","Score":null,"Total":0}
Wideband Push-Pull Class E Amplifier for RF Power Delivery
This paper presents the design and implementation of a 13.56 MHz push-pull Class E power amplifier with broad-band capabilities. The Class E amplifier utilizes SiC MOSFETs with a custom current-source resonant gate driver. Because the amplifier is a push-pull structure, we design and implement a balun that converts the differential output into a ground-referenced output. This work experimentally demonstrates the proposed amplifier delivering over 1 kW power to a 50 $\Omega$ load impedance.
期刊介绍:
COMPEL exists for the discussion and dissemination of computational and analytical methods in electrical and electronic engineering. The main emphasis of papers should be on methods and new techniques, or the application of existing techniques in a novel way. Whilst papers with immediate application to particular engineering problems are welcome, so too are papers that form a basis for further development in the area of study. A double-blind review process ensures the content''s validity and relevance.