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引用次数: 0

摘要

用TCNQ、碘和季铵制备了一系列三元化合物,在80 ~ 300 K温度范围内测量了微波频率(9.1 GHz)下的复介电常数和热电功率。在“类佩尔斯”跃迁之上,热电功率结果在具有哈伯德间隙的本征半导体方面进行了讨论。对于高温阶段的微波结果的解释,可以采用断链模型,而在低温阶段,定域电子的概念是重要的。该系列产品由TCNQ、d'iode和d'季铵盐组成,在温度(80 - 300 K)下工作,le pouvoir热电偶和la constant介电偶和频率(9.1 GHz)下工作。关于一种与“佩尔斯型”热电转换有关的热电结构,一种由哈伯德(Hubbard)提出的半导体材料。结果表明:微晶片在贴合层模型上与相温有关,段耦合层与相温有关,对贴合层局部化的影响非常重要。
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Mircowave Conductivity and Thermoelectric Power of Some Ternary Salts of TCNQ and Iodine
For a series of ternary compounds made with TCNQ, iodine, and quaternary ammonium the complex dielectric constant at microwave frequency (9.1 GHz) and the thermoelectric power are measured in the emperature range 80 to 300 K. Above a “Peierls-like” transition the thermoelectric power results are discussed in terms of an inrinsic semiconductor with Hubbard gap. For interpretation of the microwave results in the high-temperature phase an interrupted strand model can be applied, whereas in the low-temperature phase the localized electron concept is important. Pour une serie des sels ternaires composes du TCNQ, d'iode et d'ammonium quaternaire, on a etudie, en fonction de la temperature (80 a 300 K), le pouvoir thermoelectrique et la constante dielectrique a und frequence microonde (9,1 GHz). On a associe le comportement du pouvoir thermoeletrique au-dessus de la transition de “type de Peierls” a celui d'un semiconduceur presentant un gap de Hubbard. Pour interpreter les resultats microondes dans la phase haute-temperature on peut appliquer le modele, de segments coupes alors que la phase basse-temperature l'influence de la localization des elerons peut etre impotante.
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