K. Fröhlich, J. Šouc, D. Machajdík, A. Kobzev, F. Weiss, J. Sénateur, K. Dahmen
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引用次数: 3
摘要
研究了气溶胶MOCVD法制备的ceo2外延薄膜的性能。在500 ~ 900℃的沉积温度下，薄膜被沉积在(1102)蓝宝石上。在高沉积温度下生长的薄膜具有最佳的性能。膜的厚度为~ 0.2 μm，全宽为0.3°~ 0.4°。在通道模式下，后向散射光谱测量的最小产率为5.5%，证实了沉积膜的高择优取向。通过φ-扫描测量，揭示了ceo2薄膜的外延特性。发现气溶胶MOCVD ceo2薄膜适合作为制备超导高温度c薄膜的缓冲层。在ceo2 /(1102)蓝宝石上沉积的YBa 2 Cu 3 O 1超导薄膜表现出超导转变温度t0 (R=0) = 86 K
Properties of Thin Epitaxial Aerosol MOCVD CeO2 Films Grown on (1102) Sapphire
We have examined the properties of thin epitaxial CeO 2 films prepared by aerosol MOCVD. The films were deposited on (1102) sapphire at deposition temperatures between 500 °C and 900°C. The best properties were observed for the film grown at high deposition temperatures. The films have thickness ∼ 0.2 μm and the full width at half maximum of the rocking curve 0.3° - 0.4°. The minimal yield measured by backscattering spectrometry in the channeling mode was 5.5%, confirming high preferred orientation of the deposited films. The epitaxial character of the CeO 2 films was revealed by the measurement of the φ-scan. The aerosol MOCVD CeO 2 films were found to be suitable as a buffer layer for a preparation of superconducting high-T c films. YBa 2 Cu 3 O 1 superconducting films deposited on the CeO 2 /(1102) sapphire exhibit superconducting transition temperature T 0(R=0) = 86 K
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