非晶共价半导体中短距离有序在产生能隙中的作用

Discussions of The Faraday Society Pub Date : 1970-01-01 DOI:10.1039/DF9705000020

J. Klima, T. C. Mcgill, J. Ziman

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引用次数: 11

摘要

利用多重散射的形式，研究了短程有序在确定无序共价半导体态密度中的作用。详细计算了一个由碳原子团簇组成的模型的近似态密度，在非晶锗和结晶锗中发现了构型。这些计算表明，非晶共价半导体中的能隙是短程有序的结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Role of short-range order in producing an energy gap in amorphous covalent semiconductors

The role of short-range order in determining the density of states of disordered covalent semiconductors is investigated using the multiple scattering formalism. Detailed calculations of an approximate density of states for a model consisting of clusters of carbon atoms in configurations found in amorphous and crystalline germanium are reported. These calculations suggest that the energy gap in amorphous covalent semi-conductors is a result of the short-range order.

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Discussions of The Faraday Society

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