In situ investigations of the metal-compound semiconductor interaction by mass spectrometry and electrical resistance measurements

This paper describes the experimental technique of an in situ mass spectrometric method proved to be suitable for studying the processes taking place during heat-treatments of contacts between metals and compound semiconductors. This method was combined with an in situ electrical measurement of the voltage drop across the sample during the heat-treatment.

In the case of gallium arsenide, the contacts were exposed to an arsenic molecular beam for replacing the arsenic evaporated out of the contact system due to high-temperature annealing.