W. Hofmann, M. Gorblich, G. Böhm, M. Ortsiefer, L. Xie, M. Amann
{"title":"用于光互连的长波长二维VCSEL阵列","authors":"W. Hofmann, M. Gorblich, G. Böhm, M. Ortsiefer, L. Xie, M. Amann","doi":"10.1109/CLEO.2008.4551307","DOIUrl":null,"url":null,"abstract":"We present a monolithically integrated, individually addressable 2D VCSEL array. These lasers, based on InP, emit at 1.55 mum and provide, with 10 GHz modulation bandwidth at moderate biasing conditions, high-speed capabilities for optical interconnects.","PeriodicalId":6382,"journal":{"name":"2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science","volume":"37 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2008-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Long-wavelength 2-D VCSEL arrays for optical interconnects\",\"authors\":\"W. Hofmann, M. Gorblich, G. Böhm, M. Ortsiefer, L. Xie, M. Amann\",\"doi\":\"10.1109/CLEO.2008.4551307\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a monolithically integrated, individually addressable 2D VCSEL array. These lasers, based on InP, emit at 1.55 mum and provide, with 10 GHz modulation bandwidth at moderate biasing conditions, high-speed capabilities for optical interconnects.\",\"PeriodicalId\":6382,\"journal\":{\"name\":\"2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science\",\"volume\":\"37 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEO.2008.4551307\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEO.2008.4551307","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Long-wavelength 2-D VCSEL arrays for optical interconnects
We present a monolithically integrated, individually addressable 2D VCSEL array. These lasers, based on InP, emit at 1.55 mum and provide, with 10 GHz modulation bandwidth at moderate biasing conditions, high-speed capabilities for optical interconnects.