P.J.A. Thijs, L.F. Tiemeijer, J.J.M. Binsma, T. Van Dongen
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Strained-layer InGaAs(P) quantum well semiconductor lasers and semiconductor laser amplifiers
Progress in long-wavelength strained (compressive and tensile) InGaAs(P) quantum well semiconductor lasers and amplifiers for applications in optical fibre communication systems is reviewed. By the application of grown-in strain, device performance is considerably improved to such an extent that conventional bulk and unstrained quantum well active-layer devices are outperformed, while high reliability, similar to that of unstrained devices, is maintained.
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