辐照对TlGaS2单晶介电性能的影响

2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI:10.1109/OMEE.2012.6464802

S. Mustafaeva, M. Asadov, A. Ismailov

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引用次数: 0

摘要

真正的(ε)和虚(ε)部分复杂介质的介电常数和ac-conductivity(σac)的层TlGaS2单晶一直在测量频率范围f = 5×104−3.5×107 Hz前后γ辐照剂量Dγ104×2.15×106 rad。结果表明,辐射剂量的累积TlGaS2单晶导致实实在在的提高ε”并提高ε”分散。利用高频介电测量对辐照前后TlGaS2单晶的局域态主要参数进行了评价。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of gamma irradiation on the dielectric properties of the TlGaS2 single crystal

The real (ε′) and imaginary (ε″) parts of complex dielectric permittivity and ac-conductivity (σac) across the layers of TlGaS2 single crystal have been measured in the frequency range f = 5 × 10⁴ − 3.5 × 10⁷ Hz before and after gamma irradiation with doses Dγ from 5 × 10⁴ to 2.15 × 10⁶ rad. It was shown that the accumulation of radiation dose in TlGaS2 single crystal leads to tangible increase in ε″ and to increase of ε″ dispersion. The main parameters of localized states in TlGaS2 single crystal before and after gamma irradiation were evaluated from high- frequency dielectric measurements.

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2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)

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