Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN via Mg Co-doped with 4d-Element (In)

1 Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100086, China 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 3 Lyles School of Civil Engineering, Birck Nanotechnology Center, Sustainable Materials and Renewable Technology (SMART) Lab, Purdue University, West Lafayette, IN 47906 USA 4 Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla MO 65409, USA *E-mail: lzq@semi.ac.cn 1,2* 1,2 1,2 4 3 1,2 Zhiqiang Liu, Xiaoyan Yi, Junxi Wang, Ian Ferguson, Na Lu and Jinmin Li View Article Online