硅基BIB太赫兹探测器非均匀性研究

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Pub Date : 2019-09-01 DOI:10.1109/IRMMW-THz.2019.8874321

Xiaodong Wang, Yulu Chen, B. Wang, Chuansheng Zhang, Haoxing Zhang

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引用次数: 0

摘要

制备了硅基阻塞杂质带(BIB)阵列探测器。为了研究太赫兹阵列探测器的非均匀性，在-4V到4V范围内，用阳极偏置扫描法测量了单阵列芯片上4个不同像素点的暗电流密度与阳极偏置的关系。结果表明，制备的硅基BIB阵列探测器的非均匀性最小值为7.6%。

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Nonuniformity study for silicon-based BIB terahertz detectors

Silicon-based blocked-impurity-band (BIB) array detector has been fabricated. The dark current densities versus anode bias with anode bias scanning from -4V to 4V for four different pixels on a single array chip have been measured in order to study the nonuniformity of terahertz array detector. It has been demonstrated that the minimum nonuniformity of 7.6% can be achieved for our fabricated Silicon-based BIB array detector.

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2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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