射频功率对射频磁控溅射制备超薄无掺杂ZnO薄膜结构、光学和形貌的影响

J. V. Kumar, A. Maldonado-Alvarez, Y. Matsumoto, M. D. L. L. Olvera-Amador
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引用次数: 4

摘要

采用射频磁控溅射技术在玻璃衬底上沉积了未掺杂的ZnO超薄膜。在50、75、100和125W不同的射频功率下沉积薄膜。所测薄膜厚度均小于50nm。通过x射线衍射(XRD)研究了薄膜的结构性质,证实了薄膜是具有(002)优先取向的结晶。在300 ~ 1000nm范围内用紫外-可见分光光度法研究了其光学性质,平均透过率约为70%。AFM表征表明,rms粗糙度值随射频功率的增加而增加。
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Effect of rf power on structural, optical and morphological properties of ultrathin undoped ZnO films deposited by rf magnetron sputtering
Undoped ZnO Ultra thin films were deposited on glass substrates by rf magnetron sputtering. Thin films were deposited at various rf powers 50, 75, 100 and 125W. The measured thickness of the films were less than 50nm. Structural properties were studied by X-ray diffraction (XRD) which confirmed that the films were crystalline with a (002) preferential orientation. The optical properties were studied by UV-Vis spectrophotometry in the 300-1000nm range, obtaining an average transmittance around 70 %. The AFM characterization revealed that rms roughness value increases with rf power.
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