Gongbin Tang, Tao Han, Akihiko Teshigahara, T. Iwaki, K. Hashimoto
{"title":"层状SAW器件结构中质量加载增强有效机电耦合系数","authors":"Gongbin Tang, Tao Han, Akihiko Teshigahara, T. Iwaki, K. Hashimoto","doi":"10.1109/FCS.2015.7138870","DOIUrl":null,"url":null,"abstract":"This paper describes drastic enhancement of K<sub>e</sub><sup>2</sup> by mass loading in layered SAW device structures such as the ScAlN film/Si substrate. It is shown that this phenomenon is obvious even when an amorphous SiO<sub>2</sub> film is deposited on the top surface for temperature compensation. This enhancement is caused by SAW energy confinement to the top surface of the ScAlN layer where the IDT is placed. This K<sub>e</sub><sup>2</sup> enhancement is also found when other electrode and/or substrate materials are employed.","PeriodicalId":57667,"journal":{"name":"时间频率公报","volume":"271 1","pages":"416-419"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Enhancement of effective electromechanical coupling factor by mass loading in layered SAW device structures\",\"authors\":\"Gongbin Tang, Tao Han, Akihiko Teshigahara, T. Iwaki, K. Hashimoto\",\"doi\":\"10.1109/FCS.2015.7138870\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes drastic enhancement of K<sub>e</sub><sup>2</sup> by mass loading in layered SAW device structures such as the ScAlN film/Si substrate. It is shown that this phenomenon is obvious even when an amorphous SiO<sub>2</sub> film is deposited on the top surface for temperature compensation. This enhancement is caused by SAW energy confinement to the top surface of the ScAlN layer where the IDT is placed. This K<sub>e</sub><sup>2</sup> enhancement is also found when other electrode and/or substrate materials are employed.\",\"PeriodicalId\":57667,\"journal\":{\"name\":\"时间频率公报\",\"volume\":\"271 1\",\"pages\":\"416-419\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"时间频率公报\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.1109/FCS.2015.7138870\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"时间频率公报","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.1109/FCS.2015.7138870","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhancement of effective electromechanical coupling factor by mass loading in layered SAW device structures
This paper describes drastic enhancement of Ke2 by mass loading in layered SAW device structures such as the ScAlN film/Si substrate. It is shown that this phenomenon is obvious even when an amorphous SiO2 film is deposited on the top surface for temperature compensation. This enhancement is caused by SAW energy confinement to the top surface of the ScAlN layer where the IDT is placed. This Ke2 enhancement is also found when other electrode and/or substrate materials are employed.
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