具有超宽发射孔径的高功率准连续波半导体激光器(1060nm)

IF 0.9 4区工程技术 Q3 Engineering Quantum Electronics Pub Date : 2022-04-01 DOI:10.1070/qel18014

S. Slipchenko, D. Romanovich, V. Kapitonov, K. Bakhvalov, N. Pikhtin, P. Kop’ev

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引用次数: 1

摘要

研制了发射孔径为800 μm、连续p接触的高功率准连续波半导体激光器。在脉冲振幅为97 a的脉冲泵浦下，脉冲持续时间为1 ms，重复频率为10 Hz，在波长1060 ~ 1070 nm处的最大峰值功率为87 W。实验估计表明，在97 a的电流下，激光脉冲末端的有源区过热可达36.7℃。

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High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture

High-power quasi-cw semiconductor lasers with an emitting aperture 800 μm wide and a continuous p-contact are developed. Laser operation with a pulse duration of 1 ms, a repetition rate of 10 Hz, and a maximum peak power of 87 W at a wavelength 1060 – 1070 nm is demonstrated under pumping by current pulses with am amplitude of 97 A. Experimental estimates show that overheating of the active region at the end of the laser pulse at a current of 97 A may reach 36.7 °C.

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来源期刊

Quantum Electronics 工程技术-工程：电子与电气

CiteScore

3.00

自引率

11.10%

发文量

审稿时长

3-6 weeks

期刊介绍： Quantum Electronics covers the following principal headings Letters Lasers Active Media Interaction of Laser Radiation with Matter Laser Plasma Nonlinear Optical Phenomena Nanotechnologies Quantum Electronic Devices Optical Processing of Information Fiber and Integrated Optics Laser Applications in Technology and Metrology, Biology and Medicine.