氯化酞菁铜在KCl表面的外延生长机理

Yoshio Saito
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引用次数: 10

摘要

将氯化酞菁铜粉(ClCuPc)升华至400 Å厚,并在KCl解理面上进行了电镜和衍射分析。ClCuPc晶体以s取向生长(分子位于衬底上),p取向生长(分子平行于衬底)。在衬底温度为250℃时,随着沉积速率的增加,s取向占主导地位。根据ClCuPc在KCl表面的吸附能,讨论了这些取向晶体的生长机理。
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Epitaxial growth mechanism of chlorinated copper phthalocyanine on KCl surfaces

Powdered chlorinated copper phthalocyanine (ClCuPc) was sublimated to a thickness of 400 Å onto KCl cleavage faces, and the films were examined with electron microscopy and diffraction. The ClCuPc crystals grew with S-orientation in which the molecules stand on the substrate, and with P-orientation in which the molecules lie parallel to the substrate. At the substrate temperature of 250°C, the S-orientation became dominant with increasing deposition rates. The growth mechanism of the crystals with these orientations is discussed on the basis of the adsorption energy of ClCuPc on a KCl surface.

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