用于堆叠Blumlein脉冲的光导开关增强和寿命研究

F. Davanloo, R. Dussartt, M. Iosif, C. Collins, F. Agee
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引用次数: 16

摘要

德克萨斯大学达拉斯分校(University of Texas at Dallas)开发的堆叠Blumlein脉冲的光导开关,目前可产生高功率、纳秒级脉冲,上升时间约为200 ps。该器件具有紧凑的几何结构,由一个低功率激光二极管阵列触发的单一砷化镓开关进行整流。本文介绍了在改进堆叠Blumlein脉冲的高增益开关操作和寿命方面取得的进展。讨论了使用非晶金刚石提高开关操作和寿命的可行性。通过在GaAs开关阴极的触发面涂覆非晶金刚石的高粘接膜,证明了开关寿命的提高。
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Photoconductive switch enhancements and lifetime studies for use in stacked Blumlein pulsers
Photoconductive switching of the stacked Blumlein pulsers, developed at the University of Texas at Dallas, currently produces high power, nanosecond pulses with risetimes of the order of 200 ps. The device has a compact geometry and is commutated by a single GaAs switch triggered by a low power laser diode array. This report presents the progress toward improving the high gain switch operation and lifetime in stacked Blumlein pulsers. Feasibility of the use of amorphic diamond to enhance the switch operation and longevity is discussed. Improvement in switch lifetime was demonstrated by coating the triggered face of a GaAs switch cathode with highly adhesive film of amorphic diamond.
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