单薄盒(SOTB) mosfet中线边缘粗糙度引起的可变性

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI:10.1109/SNW.2010.5562559

Yunxiang Yang, Xiaoyan Liu, G. Du, R. Han

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引用次数: 0

摘要

对20nm栅极SOTB mosfet进行了统计三维TCAD仿真，研究了TBox、v背栅和WF对ler诱导变异性的影响。我们的研究结果表明，薄盒、反向反向偏置和高WF是控制ler感应阈值电压变化的有效方法，特别是对于n-SOTB mosfet。

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Variability induced by Line edge roughness in silicon on thin box (SOTB) MOSFETs

Statistical 3D TCAD simulations of 20nm gate SOTB MOSFETs have been done to study the effects of TBox, Vback-gate and WF on LER-induced variability. Our results show that thin box, reverse back-gate bias and high WF are effective ways to control the LER-induced threshold voltage's variations, especially for n-SOTB MOSFETs.

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2010 Silicon Nanoelectronics Workshop

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