A new consideration of correlation between external noise sources in HEMT two-temperature model

We consider the correlation between equivalent gate and drain noise sources in the two-temperature model to demonstrate a better compatibility between measured noise parameters (y/sub opt/, R/sub n/ , F/sub min/) and the results from simulation. The originality of the contribution lies in considering correlation between external input and output equivalent noise temperatures ( T/sub in/ and T/sub out/) for a transistor. Danneville's model has been used with two additional constants (real and imaginary parts of correlation) which has a better agreement with measurements. A two stage MMIC compatible HEMT low noise amplifier at Ka-band, which could be used for local multipoint distribution systems (LMDS) and fixed satellite services (FSS), has been designed and the effect on its noise figure of noise sources' correlation has been considered. A low noise amplifier in Ka-band has been designed, and the proposed model applied to it. The results of the simulation have been compared in three cases.