CdTe:Cl和CdTe:Cu中的输运现象——从第一性原理计算

IF 0.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Physics and Chemistry of Solid State Pub Date : 2023-03-12 DOI:10.15330/pcss.24.1.126-133
O. Malyk
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引用次数: 0

摘要

本文讨论了在任意给定温度下确定碲化镉能谱、载流子波函数和晶体势的方法。利用这种方法,在超级单体方法的框架内,计算了碲化镉中引入氯和铜杂质引起的各种类型缺陷的电离能的温度依赖性。此外,所提供的方法允许定义光学和声学变形势的温度依赖性,以及电荷载流子的散射参数对电离杂质、极性光学、压电光学和压电声学声子的温度依赖性。在短程散射模型的框架内,考虑了载流子迁移率和霍尔因子的温度依赖性。
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The Transport phenomena in CdTe:Cl and CdTe:Cu - calculation from the first principles
In the presented article the method of determining the energy spectrum, the wave function of the charge carrier and the crystal potential in CdTe at an arbitrarily given temperature is considered. Using this approach within the framework of the supercell method the temperature dependences of the ionization energies of various types of defects caused by the introduction of chlorine and copper impurities in cadmium telluride are calculated. Also the offered method allows to define the temperature dependence   of the optical and acoustic deformation potentials and as well as the dependence on the temperature the charge carrier’s scattering parameters on ionized impurities, polar optical, piezooptic and piezoacoustic phonons. Within the framework of short-range scattering models the temperature dependences of the charge carrier’s mobility and Hall factor are considered.
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来源期刊
CiteScore
1.70
自引率
14.30%
发文量
83
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