电阻补偿和基于SSF的VDBA提供高GBW及其作为双组滤波器的应用

Urvashi Bansal, Maneesha Gupta, Shireesh Kumar Rai
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引用次数: 1

摘要

本文提出了一种新的压差缓冲放大器(VDBA)的CMOS实现方法。VDBA的输入级采用电阻补偿,输出级采用超源从动器(SSF)。电阻补偿提高了增益带宽积(GBW),缓冲级提高了有源元件的相位裕度和线性度。采用Mentor Graphics Eldo仿真工具,采用TSMC CMOS 0.18µm工艺参数,验证了该模块的性能。利用单个VDBA实现了一种新的双组滤波器。在不改变电路拓扑的情况下,可以实现带通、高通和低通三种标准滤波器功能。仿真结果验证了所有应用程序的正确性。基于SSF的VDBA电路体积小,结构紧凑。完整VDBA的交流仿真结果表明,GBW为950 MHz,功耗为0.45 mW。
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Resistively compensated and SSF based VDBA offering high GBW and its application as a biquad filter
This paper presents a new CMOS realization of voltage differencing buffered amplifier (VDBA). The input stage of VDBA is resistively compensated and output stage is a super source follower (SSF). The resistive compensation enhances gain bandwidth product (GBW) and buffer stage improves phase margin and linearity of the active element. The performance of the proposed block has been verified by using Mentor Graphics Eldo simulation tool with TSMC CMOS 0.18 µm process parameters. A new biquad filter is also realized using single VDBA. The three standard filter functions like band pass, high pass and low pass can be realized without changing the circuit topology. All applications are verified with their simulation results. The circuit of SSF based VDBA is quite small and compact. The ac simulation results of complete VDBA show that GBW is 950 MHz and power consumption is 0.45 mW.
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