具有高载流子迁移率和各向异性载流子迁移率的低对称二维BNP2和C2SiS结构

Shixin Song, J. Guan, David Tom'anek
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引用次数: 4

摘要

我们研究了以前未发现的二维三元化合物BNP$_2$和C$_2$ si的稳定性和电子结构。利用$ab$ initio$密度泛函理论,我们确定了每个三元化合物的四个稳定的同素异形体,并通过计算声子谱和分子动力学模拟证实了它们的稳定性。然而所有的BNP$_2$同素异形体都是半导体的,我们发现C$_2$ si,根据同素异形体的不同,是半导体的或半金属的。我们研究的半导体同素同物的基本带隙范围从$1.4$ eV到$2.2$ eV在HSE06水平,$0.5$ eV到$1.4$ eV在PBE水平,显示载流子迁移率高达$1.5{\times}10^5$ cm$^2$V$^{-1}$s$^{-1}$。如此高的迁移率在具有如此宽带隙的半导体中是相当罕见的。所有同素异形体的几何结构脊导致其力学和输运特性具有很高的各向异性,在电子和光电子领域具有广泛的应用前景。
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Low-symmetry two-dimensional BNP2 and C2SiS structures with high and anisotropic carrier mobilities
We study the stability and electronic structure of previously unexplored two-dimensional (2D) ternary compounds BNP$_2$ and C$_2$SiS. Using $ab$ $initio$ density functional theory, we have identified four stable allotropes of each ternary compound and confirmed their stability by calculated phonon spectra and molecular dynamics simulations. Whereas all BNP$_2$ allotropes are semiconducting, we find C$_2$SiS, depending on the allotrope, to be semiconducting or semimetallic. The fundamental band gaps of the semiconducting allotropes we study range from $1.4$ eV to $2.2$ eV at the HSE06 level $0.5$ eV to $1.4$ eV at the PBE level and display carrier mobilities as high as $1.5{\times}10^5$ cm$^2$V$^{-1}$s$^{-1}$. Such high mobilities are quite uncommon in semiconductors with so wide band gaps. Structural ridges in the geometry of all allotropes cause a high anisotropy in their mechanical and transport properties, promising a wide range of applications in electronics and optoelectronics.
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