{"title":"绝缘层厚度对Al/BiFeO3/ZrO2/p-Si非易失性存储器电性能的影响","authors":"Ashutosh Kumar Singh, Chandravilash Rai, S. Singh","doi":"10.1080/07315171.2020.1810984","DOIUrl":null,"url":null,"abstract":"Abstract BiFeO3 (BFO) and ZrO2 have been deposited on p-type (100) silicon substrate by sol-gel process and rf sputtering method, respectively. Metal-ferroelectric-insulator-semiconductor capacitor has been fabricated with 100 nm BFO and 10 nm ZrO2 shows maximum memory window of 1.54 V as compared to other fabricated capacitors with 5 and 15 nm insulating layer thickness. Improvement in current density has been also observed in different thickness of buffer layer of MFIS capacitors. The improved current density of order of 10-7 A/cm2 has been observed in MF(100nm)I(10nm)S structure. It has been also observed in MF(100nm)I(10nm)S structure that no charge value degrades up to 1011 iteration cycles.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":"268 1","pages":"71 - 75"},"PeriodicalIF":1.3000,"publicationDate":"2020-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of insulator layer thickness on electrical properties of Al/BiFeO3/ZrO2/p-Si for nonvolatile memory applications\",\"authors\":\"Ashutosh Kumar Singh, Chandravilash Rai, S. Singh\",\"doi\":\"10.1080/07315171.2020.1810984\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract BiFeO3 (BFO) and ZrO2 have been deposited on p-type (100) silicon substrate by sol-gel process and rf sputtering method, respectively. Metal-ferroelectric-insulator-semiconductor capacitor has been fabricated with 100 nm BFO and 10 nm ZrO2 shows maximum memory window of 1.54 V as compared to other fabricated capacitors with 5 and 15 nm insulating layer thickness. Improvement in current density has been also observed in different thickness of buffer layer of MFIS capacitors. The improved current density of order of 10-7 A/cm2 has been observed in MF(100nm)I(10nm)S structure. It has been also observed in MF(100nm)I(10nm)S structure that no charge value degrades up to 1011 iteration cycles.\",\"PeriodicalId\":50451,\"journal\":{\"name\":\"Ferroelectrics Letters Section\",\"volume\":\"268 1\",\"pages\":\"71 - 75\"},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2020-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ferroelectrics Letters Section\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1080/07315171.2020.1810984\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics Letters Section","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1080/07315171.2020.1810984","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Effect of insulator layer thickness on electrical properties of Al/BiFeO3/ZrO2/p-Si for nonvolatile memory applications
Abstract BiFeO3 (BFO) and ZrO2 have been deposited on p-type (100) silicon substrate by sol-gel process and rf sputtering method, respectively. Metal-ferroelectric-insulator-semiconductor capacitor has been fabricated with 100 nm BFO and 10 nm ZrO2 shows maximum memory window of 1.54 V as compared to other fabricated capacitors with 5 and 15 nm insulating layer thickness. Improvement in current density has been also observed in different thickness of buffer layer of MFIS capacitors. The improved current density of order of 10-7 A/cm2 has been observed in MF(100nm)I(10nm)S structure. It has been also observed in MF(100nm)I(10nm)S structure that no charge value degrades up to 1011 iteration cycles.
期刊介绍：
Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals.
Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
