基于硅cmos晶体管的检测高达4.25 THz

2011 International Conference on Infrared, Millimeter, and Terahertz Waves Pub Date : 2011-12-15 DOI:10.1109/IRMMW-THZ.2011.6105056

S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevičius, I. Kašalynas, G. Valušis, V. Krozer, H. Roskos

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引用次数: 6

摘要

我们报道了基于硅cmos晶体管的等离子体太赫兹探测器的性能，最高可达4.25太赫兹。报道了584 GHz时的1011 V/W、3.125 THz时的90 V/W和4.25 THz时的11 V/W的室温响应值。当冷却至20k时，最大响应率为3.47 kV/W，噪声等效功率为3pw /√Hz。

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Silicon CMOS-transistor-based detection up to 4.25 THz

We report on the performance of silicon CMOS-transistor-based plasmonic THz detectors up to 4.25 THz. Room-temperature responsivity values of 1011 V/W at 584 GHz, 90 V/W at 3.125 THz and 11 V/W at 4.25 THz are reported. When cooled down to 20 K a maximum responsivity of 3.47 kV/W and a noise-equivalent power of 3 pW/√Hz are reached.

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2011 International Conference on Infrared, Millimeter, and Terahertz Waves

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