Impact of conduction band non-parabolicity and dielectric mismatch on photoionization cross section of donor bound polaron in spherical GaN/InN core-shell nanoparticle

Understanding the behavior of single dopant in semiconductors is a challenge to attain a high control on optoelectronic devices. Based on the fact that the external perturbations have an important impact on properties of doped nanocrystals, we have studied the simultaneous effects of phonons and conduction band non-parabolicity combined to dielectric mismatch and donor position on the photoionization cross section of an off-center donor in spherical GaN/InN core-shell quantum dots. The calculations were carried out within the framework of the effective-mass approximation and the eigenvalues equation has been solved using the Ritz variational method. The examination of the photoionization cross section, corresponding to the first donor energy level and the non-parabolic conduction band optical transition, shows clearly that the existence of non-parabolicity band or dielectric environment causes a blue shift of resonance peaks while the existence of phonon red shift them with a non-neglected variations in their intensity. The donor position has also an important effect on peaks position and amplitude.