{"title":"分子束外延II型红外超晶格生长的模拟","authors":"C. Grein","doi":"10.1109/IPCON.2017.8116166","DOIUrl":null,"url":null,"abstract":"The modeling of molecular beam epitaxial (MBE) growth has potential benefits in identifying optimal growth conditions and predicting atomic-scale defects that may form in actual growth. We describe the use of simulation software to conduct realistic atomic-scale MBE growth simulations of Type II infrared superlattices.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"23 1","pages":"417-417"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation of molecular beam epitaxy type II infrared superlattice growth\",\"authors\":\"C. Grein\",\"doi\":\"10.1109/IPCON.2017.8116166\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The modeling of molecular beam epitaxial (MBE) growth has potential benefits in identifying optimal growth conditions and predicting atomic-scale defects that may form in actual growth. We describe the use of simulation software to conduct realistic atomic-scale MBE growth simulations of Type II infrared superlattices.\",\"PeriodicalId\":6657,\"journal\":{\"name\":\"2017 IEEE Photonics Conference (IPC) Part II\",\"volume\":\"23 1\",\"pages\":\"417-417\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Photonics Conference (IPC) Part II\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPCON.2017.8116166\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Photonics Conference (IPC) Part II","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPCON.2017.8116166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of molecular beam epitaxy type II infrared superlattice growth
The modeling of molecular beam epitaxial (MBE) growth has potential benefits in identifying optimal growth conditions and predicting atomic-scale defects that may form in actual growth. We describe the use of simulation software to conduct realistic atomic-scale MBE growth simulations of Type II infrared superlattices.
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