On some comprehensive study of the Hall mobility of an ohmic ensemble of two-dimensional electrons confined in a quantum well of a heterostructure at low lattice temperatures

The characteristic dependence of the Hall mobility upon the temperature of a degenerate ensemble of two-dimensional electrons in a well of heterostructure has been calculated in some broad details, for the ohmic field region, at the low temperatures. Apart from the electronic interactions with the remote ionized impurities and the surface roughness, the study also duly considers some factors which are often ignored for mathematical simplicity. These include, the inelasticity of the electron-phonon collisions and the true phonon distribution. The results thus obtained for heterostructures like AlGaAs/GaAs, AlGaN/GaN and AlInSb/InSb, show that the consideration of the above details significantly changes the overall characteristics, and makes them agree quite well with the experimental data.