硅基纳米晶金刚石表面氮化铝层状结构的超高表面声速研究

O. Elmazria, F. Bénédic, M. B. Assouar, D. Monéger, L. Le Brizoual, A. Gicquel, P. Alnot
{"title":"硅基纳米晶金刚石表面氮化铝层状结构的超高表面声速研究","authors":"O. Elmazria, F. Bénédic, M. B. Assouar, D. Monéger, L. Le Brizoual, A. Gicquel, P. Alnot","doi":"10.1109/ULTSYM.2007.80","DOIUrl":null,"url":null,"abstract":"In this work nanocrystalline diamond (NCD) was investigated as high velocity and low propagation loss substrate for SAW devices. The considered layered structure is AIN/NCD/Silicon. First the 16 mum of (110)-oriented NCD films were grown on <100>-oriented silicon substrates of approximately 2.5 cm2 in size. Smooth piezoelectric AIN films with columnar structure and (002) orientation were then deposited on the NCD surface. The AIN film thickness was fixed to 1 mum and the spatial periodicity of IDT to 20 mum. The operating frequency of the realized device was measured at 645 MHz. This shows that surface acoustic waves being propagated at the velocity of 13 km/s were generated in this structure. The obtained velocity value is a quite higher than the value obtained by calculation when elastic constants of polycrystalline are used.","PeriodicalId":6355,"journal":{"name":"2007 IEEE Ultrasonics Symposium Proceedings","volume":"126 1","pages":"276-279"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"4E-3 Very High Surface Acoustic Wave Velocity on the Layered Structure Formed of Aluminium Nitride on Nanocrystalline Diamond on Silicon\",\"authors\":\"O. Elmazria, F. Bénédic, M. B. Assouar, D. Monéger, L. Le Brizoual, A. Gicquel, P. Alnot\",\"doi\":\"10.1109/ULTSYM.2007.80\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work nanocrystalline diamond (NCD) was investigated as high velocity and low propagation loss substrate for SAW devices. The considered layered structure is AIN/NCD/Silicon. First the 16 mum of (110)-oriented NCD films were grown on <100>-oriented silicon substrates of approximately 2.5 cm2 in size. Smooth piezoelectric AIN films with columnar structure and (002) orientation were then deposited on the NCD surface. The AIN film thickness was fixed to 1 mum and the spatial periodicity of IDT to 20 mum. The operating frequency of the realized device was measured at 645 MHz. This shows that surface acoustic waves being propagated at the velocity of 13 km/s were generated in this structure. The obtained velocity value is a quite higher than the value obtained by calculation when elastic constants of polycrystalline are used.\",\"PeriodicalId\":6355,\"journal\":{\"name\":\"2007 IEEE Ultrasonics Symposium Proceedings\",\"volume\":\"126 1\",\"pages\":\"276-279\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Ultrasonics Symposium Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULTSYM.2007.80\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Ultrasonics Symposium Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.2007.80","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文研究了纳米晶金刚石(NCD)作为SAW器件的高速低传播损耗衬底。所考虑的层状结构是AIN/NCD/Silicon。首先,在尺寸约为2.5 cm2的定向硅衬底上生长16 μ m(110)定向NCD薄膜。然后在NCD表面沉积了具有柱状结构和(002)取向的光滑压电AIN薄膜。AIN膜厚度固定为1 μ m, IDT的空间周期性固定为20 μ m。所实现装置的工作频率为645 MHz。这表明在该结构中产生了以13 km/s的速度传播的表面声波。采用多晶弹性常数计算得到的速度值比计算得到的速度值要高得多。
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4E-3 Very High Surface Acoustic Wave Velocity on the Layered Structure Formed of Aluminium Nitride on Nanocrystalline Diamond on Silicon
In this work nanocrystalline diamond (NCD) was investigated as high velocity and low propagation loss substrate for SAW devices. The considered layered structure is AIN/NCD/Silicon. First the 16 mum of (110)-oriented NCD films were grown on <100>-oriented silicon substrates of approximately 2.5 cm2 in size. Smooth piezoelectric AIN films with columnar structure and (002) orientation were then deposited on the NCD surface. The AIN film thickness was fixed to 1 mum and the spatial periodicity of IDT to 20 mum. The operating frequency of the realized device was measured at 645 MHz. This shows that surface acoustic waves being propagated at the velocity of 13 km/s were generated in this structure. The obtained velocity value is a quite higher than the value obtained by calculation when elastic constants of polycrystalline are used.
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