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引用次数: 5

摘要

M.M. Perlmann(1989)发表了具有“陷阱”(0.8 eV范围内的电位阱)和“陷阱”和“跳跃点”(0.3 eV范围内的电位阱)组合的传导模型。然而,后者的模型不能外推到前者,因为跳跃站点的数量趋于零。因此,电导率不能计算任意密度的陷阱和跳跃点。建立了一个基于最近近邻和次近邻“陷阱”和“跳跃点”之间的量子隧穿的模型来计算高电场下的跳跃诱导电导率。结果与Perlman的数据进行了比较。
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Model for high field conduction in doped polymers
M.M. Perlmann (1989) has published models for conduction with "traps" (potential wells in the range of 0.8 eV) and with a combination of "traps" and "hopping sites" (potential wells in the range of 0.3 eV). However, the model for the latter does not extrapolate into the former as the number of hopping sites goes to zero. As a result, the conductivity cannot be computed for arbitrary densities of traps and hopping sites. A model has been developed based on quantum tunneling between the nearest neighbor and next nearest neighbor "traps" and "hopping sites" to calculate the hopping-induced conductivity, especially at high electric fields. The results are compared with Perlman's data.
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