垂直磁各向异性Tm3Fe5O12/Pt中磁介子介导的自旋电流

G. Vilela, J. E. Abrão, E. Santos, Y. Yao, J. Mendes, R. L. Rodríguez-Suárez, S. Rezende, W. Han, A. Azevedo, J. Moodera
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引用次数: 8

摘要

具有垂直磁各向异性(PMA)的磁绝缘体(MI)石榴石薄膜中磁振子携带的纯自旋电流的控制是自旋电子技术的重要研究方向,因为它们可用于携带、传输和处理信息。具有PMA的石榴石薄膜具有丰富磁化动力学的迷宫畴磁性结构,可用于更高效的基于波的逻辑和存储计算器件。在MI/NM双层中,纳米是一种提供强自旋-轨道耦合的普通金属,PMA通过降低所需电流和使过程更快,有利于自旋-轨道扭矩(SOT)驱动的磁化开关,这对于开发磁性随机存取存储器(SOT- mram)至关重要。在这项工作中,我们通过铁磁共振测量研究了PMA在铥铁石榴石(TIG)薄膜中的磁各向异性,然后在微波和热流驱动下激发和检测了TIG/Pt中磁非介导的纯自旋电流。TIG薄膜在300 K和9.5 GHz下的吉尔伯特阻尼常数{\alpha} 0.01,共振场大于3.5 kOe,半线宽大于60 Oe。通过TIG/Pt观察到自旋到电荷的电流转换,在Pt膜边缘产生微电压。得到的自旋塞贝克系数为0.54 {\mu} V/K,也证实了较高的界面自旋透明度。
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Magnon-mediated spin currents in Tm3Fe5O12/Pt with perpendicular magnetic anisotropy
The control of pure spin currents carried by magnons in magnetic insulator (MI) garnet films with a robust perpendicular magnetic anisotropy (PMA) is of great interest to spintronic technology as they can be used to carry, transport and process information. Garnet films with PMA present labyrinth domain magnetic structures that enrich the magnetization dynamics, and could be employed in more efficient wave-based logic and memory computing devices. In MI/NM bilayers, where NM being a normal metal providing a strong spin-orbit coupling, the PMA benefits the spin-orbit torque (SOT) driven magnetization's switching by lowering the needed current and rendering the process faster, crucial for developing magnetic random-access memories (SOT-MRAM). In this work, we investigated the magnetic anisotropies in thulium iron garnet (TIG) films with PMA via ferromagnetic resonance measurements, followed by the excitation and detection of magnon-mediated pure spin currents in TIG/Pt driven by microwaves and heat currents. TIG films presented a Gilbert damping constant {\alpha}~0.01, with resonance fields above 3.5 kOe and half linewidths broader than 60 Oe, at 300 K and 9.5 GHz. The spin-to-charge current conversion through TIG/Pt was observed as a micro-voltage generated at the edges of the Pt film. The obtained spin Seebeck coefficient was 0.54 {\mu}V/K, confirming also the high interfacial spin transparency.
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