{"title":"具有和不具有表面凹槽结构的氮化镓PiN型紫外光电二极管的比较研究","authors":"M. Okada, Yuta Miyachi, M. Miyoshi, T. Egawa","doi":"10.14723/TMRSJ.42.151","DOIUrl":null,"url":null,"abstract":"We report on the fabrication and characterization of AlGaN-based PiN type UV photodiodes with and without the surface recessed electrode structures. It was confirmed that the device with the surface recessed structure showed a much higher responsivity of 202 mA/W at a wavelength of 272 nm under a reverse bias voltage of -5 V than that of the device without the surface structure. This responsivity corresponds to external quantum efficiency as high as 92%.","PeriodicalId":23220,"journal":{"name":"Transactions-Materials Research Society of Japan","volume":"11 1","pages":"151-153"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A comparative study of AlGaN-based PiN type UV photodiodes with and without surface recessed structures\",\"authors\":\"M. Okada, Yuta Miyachi, M. Miyoshi, T. Egawa\",\"doi\":\"10.14723/TMRSJ.42.151\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the fabrication and characterization of AlGaN-based PiN type UV photodiodes with and without the surface recessed electrode structures. It was confirmed that the device with the surface recessed structure showed a much higher responsivity of 202 mA/W at a wavelength of 272 nm under a reverse bias voltage of -5 V than that of the device without the surface structure. This responsivity corresponds to external quantum efficiency as high as 92%.\",\"PeriodicalId\":23220,\"journal\":{\"name\":\"Transactions-Materials Research Society of Japan\",\"volume\":\"11 1\",\"pages\":\"151-153\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Transactions-Materials Research Society of Japan\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.14723/TMRSJ.42.151\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions-Materials Research Society of Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.14723/TMRSJ.42.151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comparative study of AlGaN-based PiN type UV photodiodes with and without surface recessed structures
We report on the fabrication and characterization of AlGaN-based PiN type UV photodiodes with and without the surface recessed electrode structures. It was confirmed that the device with the surface recessed structure showed a much higher responsivity of 202 mA/W at a wavelength of 272 nm under a reverse bias voltage of -5 V than that of the device without the surface structure. This responsivity corresponds to external quantum efficiency as high as 92%.
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